Part Number Decoder
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专业术语
- 容量：
- 一个模块上内存单元的完整号码用MB或GB来表示。对于套装，列表中的容量是套装里所有模块容量之总和。
- CAS延时：
- 一种最重要的表示资料在内存模块中传输时的等待（wait）时延（用时钟周期表示）。一旦数据的读写指令和列队地址被写入后，CAS延时将会控制等待时间，直到资料准备好读出或写入。
- DDR3
- <!--Third generation of Double Data Rate (DDR) SDRAM memory. Similar to DDR2, it is a continuing evolution of DDR memory technology that
delivers higher speeds (up to 1600 MHz), lower power consumption and heat dissipation. It is an ideal memory solution for bandwidth hungry
systems equipped with dual and quad core processors and the lower power consumption is a perfect match for both server and mobile platforms-->第三代 DDR 内存技术。与 DDR2 相似，它是 DDR 内存技术的新一代产品，它能带来更快的速度 (最高可达 1600 MHz)，更低的耗电量和发热。对于带宽有大量需求的双核心或四核心系统来说，它是一个非常合适的内存解决方案，低耗电对于服务器和移动式平台更是一个完美的组合。
- DDR2
- 第二代DDR内存技术。 DDR2内存模块由于具有更低的电压、不同的引脚配置和不兼容的内存芯片技术，而不能向后兼容于DDR。
- Kit
- 内含多片模块的单独包装： K2＝2片模块在一个套装里。
- Registered
- 内存模块内含寄存器芯片和相同步逻辑芯片，其中寄存器芯片用来传递和同步由主机板上内存控制器发出的地址和控制信号，相同步逻辑芯片用来将主机板的时脉信号传递给所有的DRAM芯片。
- 速度:
- 内存模块所支持的数据传输速率或是有效的时脉频率。 <!--
Glossary
- Capacity
- Total number of memory cells on a module expressed in Megabytes or Gigabytes. For kits, listed capacity is the combined capacity of all
modules in the kit.
- CAS Latency
- One of the most important latency (wait) delays (expressed in clock cycles) when data is accessed on a memory module. Once the data read
or write command and the row/column addresses are loaded, CAS Latency represents the (final) wait time until the data is ready to be read or
written.
- DDR3
- Third generation of Double Data Rate (DDR) SDRAM memory. Similar to DDR2, it is a continuing evolution of DDR memory technology that
delivers higher speeds (up to 1600 MHz), lower power consumption and heat dissipation. It is an ideal memory solution for bandwidth hungry
systems equipped with dual and quad core processors and the lower power consumption is a perfect match for both server and mobile platforms
- DDR2
- Second-generation DDR memory technology. DDR2 memory modules are not backward-compatible with DDR due to lower voltage, different pin
configurations and incompatible memory chip technology.
- Kit
- A single package containing multiple memory modules: K2 = 2 modules in a kit.
- Registered
- A memory module containing Register chip(s) used to relay and synchronize address and control signals issued by the motherboard's
memory controller, and a Phase Locked Loop (PLL) chip used to relay the motherboard's clock signal to all the DRAM chips.
- Speed
- The data rate or effective clock speed that a memory module supports.
-->
? 以下信息会帮助您在调整主板 BIOS 内存选项的时候进行适当的设定，以确保最佳的性能。请注意，这些设置可能会由于主板品牌／型号和 BIOS 的升级而有所不同。
例如:
| 时脉 |
|
| KHX3200A/512 |
2-3-2-6-1 |
| |
定义 |
简称 |
功能 |
| 2 |
CAS Latency |
CL |
Delay between activation of row and reading of row |
| 3 |
RAS to CAS
(or Row to Column Delay) |
tRCD |
Activates row |
| 2 |
Row Precharge Delay
(or RAS Precharge Delay) |
tRP/tRCP |
Deactivates row |
| 6 |
Row Active Delay
(or RAS Active Delay,
or time to ready) |
tRA/tRD/tRAS |
Number of clock cycles between activation and deactivation of row |
| 1 |
Command Rate |
CMD Rate |
Delay between chip select and command |
请注意: 所有的金士顿产品都经过严格测试确保符合我们公布的规格。一些系统或主机板配置可能无法运行在公布的HyperX内存速度和时间设定上。金士顿不建议使用者试图超越公布的速度。超频或者更改系统时脉都可能损坏计算机组件
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Post By：2010/9/10 12:05:53 [只看该作者]
